Comprehensive numerical analysis of doping controlled efficiency in lead free Cs(SnGe)I3 perovskites solar cell
Nazmul Hasan, M. Hussayeen Khan Anik, Mohammed Mehedi Hasan, Sharnali, Islam, Alamgir Kabir

TL;DR
This study employs DFT and device simulations to optimize doping in lead-free CsSn1-xGexI3 perovskites, achieving a 23.80% efficiency and providing insights for designing stable, high-performance solar cells.
Contribution
It introduces a comprehensive approach combining DFT and SCAPS-1D simulations to optimize Ge doping in CsSnI3 perovskites for enhanced solar cell efficiency.
Findings
Higher Ge concentration increases bandgap and absorption.
Optimized device with 75% Ge achieves 23.80% PCE.
Doping tuning improves stability and performance.
Abstract
One effective way to prevent toxicity and improve the stability of materials for photovoltaic applications is to exclude lead and organic molecules from perovskite materials. Specifically, the CsSn1-xGexI3 appears to be a promising contender; nonetheless, it requires optimization, particularly bandgap tuning by doping concentration modifications. In this study, density functional theory (DFT) was employed to comprehensively analyze the electronic properties of CsSn1-xGexI3 that influenced light-matter interactions tuning of the perovskite materials by varying composition in B site atoms. We use the solar cell capacitance (SCAPS-1D) simulator to compute device performance; however, it computes the absorption spectrum using a simplified mathematical function that approximates the actual spectrum. To achieve a quantum-mechanical level of accuracy DFT extracted parameters like absorption…
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