Anisotropic resonance energy transfer with strained phosphorene

TL;DR

This study investigates how uniaxial strain influences resonance energy transfer between quantum emitters near anisotropic phosphorene, revealing direction-dependent and strain-tunable RET rates with potential applications in 2D material-based optoelectronics.

Contribution

It demonstrates the significant impact of anisotropic electronic structure and uniaxial strain on RET rates in phosphorene, providing a general understanding applicable to other 2D materials.

Findings

RET rate varies drastically along zigzag direction

RET rate can be highly modulated by uniaxial strain

Anisotropy in RET is a general feature of 2D materials

Abstract

We analyze the resonance energy transfer (RET) rate between quantum emitters (QEs) near a phosphorene/SiC interface under the effects of uniaxial strain. Using a low-energy tight-binding model, we describe the electronic structure of strained phosphorene in an experimentally feasible situation. Due to the anisotropic electronic structure of phosphorene, we demonstrate that the RET rate drastically depends on the direction in which the QEs are separated relative to the phosphorene lattice. More specifically, we obtain a large variation in the RET rate when the QEs are separated along the zigzag direction, in contrast to a rather small variation when separated along the armchair direction of phosphorene's crystalline structure. Furthermore, our results reveal that the RET rate can be highly modulated by uniaxial strain in phosphorene when considering emitters placed along the zigzag direction. Finally, by means of a simple toy model, we also show that this anisotropy in the RET rate is a general characteristic produced by anisotropic 2D materials.