Transient studies using a TCAD and Allpix Squared combination approach

TL;DR

This paper presents a combined TCAD and Allpix Squared simulation approach to study transient responses in silicon pixel detectors, validating the method and analyzing charge collection for improved sensor performance.

Contribution

It introduces a validated simulation methodology combining TCAD and Allpix Squared for transient studies of silicon sensors, enhancing understanding of sensor response dynamics.

Findings

Validated the combined simulation approach against experimental data

Analyzed charge collection efficiency and timing response

Demonstrated reduced simulation time with combined methods

Abstract

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.