Electric field control of nonlinear Hall effect in Weyl semimetal TaIrTe4

TL;DR

This study demonstrates that applying an electric field to Weyl semimetal TaIrTe4 can significantly enhance and control its nonlinear Hall effect, revealing new ways to manipulate topological properties for electronic applications.

Contribution

It provides experimental evidence that electric fields can modulate the magnitude and sign of the nonlinear Hall effect in TaIrTe4, a novel approach for tuning topological responses.

Findings

NLHE response enhanced by 168 times at 4 K with electric field

Electric field modulates both magnitude and sign of NLHE

Enhancement attributed to Berry curvature dipole and disorder effects

Abstract

The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a new dimension for exploring the energy band structure and electron transport mechanism of quantum materials. Current studies mainly focus on the observation of material intrinsic the NLHE or inducing the NLHE response by artificially constructing corrugated/twisted twodimensionalmaterial systems. Notably, the modulation of NLHE signal strength, a core parameter of device performance, has attracted much attention, while theoretical predictions suggest that an applied electric field can achieve the NLHE enhancement through modulation of the Berry curvature dipole (BCD). Here we report effective modulation the magnitude and sign of the NLHE by applying additional constant electric fields of different directions and magnitudes in the semimetal TaIrTe4. The NLHE response strength is enhanced by 168 times compared to the intrinsic one at 4 K when the additional constant electric field of -0.5 kV/cm is applied to the b-axis of TaIrTe4 and the through a.c. current is parallel to the TaIrTe4 a-axis. Scaling law analysis suggests that the enhancement may be the result of the combined effect of the electric field on the intrinsic BCD and disorder scattering effect of TaIrTe4. This work provides a means to study the properties of TaIrTe4, as well as a valuable reference for the study of novel electronic devices.