High pressure structural and lattice dynamics study of {\alpha}-In$_2$Se$_3$
Shiyu Feng, Baihong Sun, Wenting Lu, Haikai Zou, Chenxin Wei, Qian, Zhang, Bihan Wang, Martin Kunz, Hirokazu Kadobayashi, Azkar Saeed Ahmad, Elad, Koren, and Elissaios Stavrou

TL;DR
This study investigates the high-pressure structural and lattice dynamics of layered $ ext{ extalpha}$-In$_2$Se$_3$ using synchrotron X-ray diffraction and Raman spectroscopy, revealing phase transitions and stability up to 45 GPa.
Contribution
It provides detailed experimental insights into the pressure-induced phase transitions and stability range of $ ext{ extalpha}$-In$_2$Se$_3$ using combined XRD and Raman techniques.
Findings
Pressure induces a phase transition from $ ext{ extalpha}$-In$_2$Se$_3$ to monoclinic $eta$'-In$_2$Se$_3$ at ~1 GPa.
The $eta$'-In$_2$Se$_3$ phase remains stable up to 45 GPa.
Beyond 45 GPa, In$_2$Se$_3$ adopts a disordered orthorhombic structure.
Abstract
Layered -InSehas been studied using a concomitant in-situ synchrotron angle dispersive powder x-ray diffraction and Raman spectroscopy study in a diamond anvil cell up to 60+ GPa, at room temperature. Helium, that remains fairly hydrostatic up to the highest pressure in this study, was used as the pressure-transmitting medium. The results from both experimental methods reveal a pressure-induced structural phase transition from -InSe to a monoclinic '-In2Se3 structure at 1 GPa, in agreement with previous studies. Based on our detailed measurements using both experimental techniques and F-f formalism, the '-InSe structure remains stable up to 45 GPa, without a clear indication of a phase transition towards the previously reported -In2Se3 phase. Above this pressure, InSe adopts a disordered solid-solution-like…
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Taxonomy
TopicsCrystal Structures and Properties · Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films
