Stark Shift from Quantum Defects in Hexagonal Boron Nitride

TL;DR

This paper investigates how the local symmetry and dielectric environment of quantum defects in hexagonal boron nitride influence the Stark shift, providing insights for their application in quantum information technologies.

Contribution

It clarifies the origin of Stark shift variations in hBN defects and highlights the role of local symmetry and dielectric environment in their optical response.

Findings

Local symmetry determines linear or quadratic Stark shift behavior.

Dielectric environment significantly affects Stark shift magnitude.

Enhanced understanding of defect micro-structure for quantum applications.

Abstract

Color centers in hexagonal boron nitride have emerged as promising candidates for quantum information applications, owing to their efficient and bright single photon emission. Despite the challenges in directly characterizing these emitters, the interaction between external fields and defects, such as the Stark shift, offers valuable insights into their local geometric configurations. In this study, we focus on clarifying the possible origin of the distinct Stark shift characteristics observed experimentally, particularly in the emission range around 2 eV. We find that the local symmetry of the defects plays a crucial role in determining the nature of the Stark shift, which can be either linear or quadratic. Additionally, the local dielectric environment significantly influences the Stark shift response. Our calculations not only enhance the understanding of the micro-structure of these hitherto unknown emitters but also pave the way for their more effective utilization as single-photon sources and qubits in quantum technologies.