Scintillation response of Ga2O3 excited by laser accelerated ultra-high dose rate proton beam
Yulan Liang, Tianqi Xu, Shirui Xu, Qingfan Wu, Chaoyi Zhang, Haoran, Chen, Qihang Han, Chenhao Hua, Jianming Xue, Huili Tang, Bo Liu, Wenjun Ma

TL;DR
This study investigates how ultra-high dose rate proton beams generated by laser acceleration affect the scintillation properties of {eta}-Ga2O3, revealing a significant decrease in decay time due to enhanced nonradiative processes.
Contribution
It demonstrates the impact of laser-accelerated high dose rate proton beams on the scintillation decay time of {eta}-Ga2O3, highlighting a novel method to study luminescent properties under extreme conditions.
Findings
Decay time of {eta}-Ga2O3 decreases by a factor of two at high dose rates.
High dose rate protons increase nonradiative recombination processes.
Potential for studying other scintillators with laser-accelerated proton beams.
Abstract
The temporal and spectral profile of \b{eta}-Ga2O3 excited by ultra-high dose rate proton beam has been investigated. The unique short bright and broad spectra characteristics of laser-accelerated protons were utilized to investigate the scintillation response difference under different dose rate. Our results indicate that for sufficiently high dose rate delivered, the average decay time of \b{eta}-Ga2O3 decreases by a factor of two. The overlap of carriers generated by high dose rate protons enhances the nonradiative recombination like Auger recombination and exciton-exciton annihilation which shortens the decay time significantly. The study opens up new avenues for investigating the luminescent properties of other scintillator materials using laser-accelerated high dose rate proton beams.
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Taxonomy
TopicsGa2O3 and related materials · Luminescence Properties of Advanced Materials · Radiation Detection and Scintillator Technologies
