Large Negative Magnetoresistance in off-Stochiometric Topological Material PrSbTe
Gokul Acharya, Krishna Pandey, M.M. Sharma, Jian Wang, Santosh Karki, Chhetri, Md Rafique Un Nabi, Dinesh Upreti, Rabindra Basnet, Josh Sakon, Jin, Hu

TL;DR
This study investigates PrSbxTe2-x, revealing composition-dependent structural and magnetic properties, including a large negative magnetoresistance at x=0.3, highlighting its potential for device applications due to magnetism-transport coupling.
Contribution
It reports the first observation of large negative magnetoresistance in off-stoichiometric PrSbTe, linked to composition-induced structural and magnetic changes.
Findings
Identification of tetragonal-to-orthorhombic transition.
Observation of large negative magnetoresistance at x=0.3.
Coupling between magnetism and electronic transport.
Abstract
Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSbxTe2-x. We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSbxTe2-x topological materials as a promising platform for device applications.
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