Photoluminescence Features of Few-Layer Hexagonal $\alpha$-In$_2$Se$_3$
I.A. Eliseyev, A.I. Veretennikov, A.I. Galimov, L.V. Kotova, G.V., Osochenko, K.A. Gasnikova, D.A. Kirilenko, M.A. Yagovkina, Yu.A. Salii, V.Yu., Davydov, P.A. Alekseev, M.V. Rakhlin

TL;DR
This study investigates the photoluminescence properties of few-layer In$_2$Se$_3$, revealing defect-related emission and stable decay times across thicknesses, contributing to understanding of its optical behavior in two-dimensional materials.
Contribution
It provides detailed analysis of photoluminescence features and decay dynamics of few-layer In$_2$Se$_3$, highlighting the stability of band structure with varying thickness.
Findings
Peak A linked to interband transitions
Peak B attributed to defects, disappearing at room temperature
Decay times remain consistent across thicknesses
Abstract
Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer InSe flakes with thicknesses ranging from 7 to 100 monolayers. To explore the photoluminescence features and correlate them with changes in crystal symmetry and surface potential, we employed a combination of techniques, including temperature-dependent micro-photoluminescence, time-resolved photoluminescence, Raman spectroscopy, atomic force microscopy, and Kelvin probe force microscopy. X-ray diffraction and Raman spectroscopy confirmed that the samples studied possess the -polytype structure. The micro-photoluminescence spectrum consists of two bands, A and B, with band B almost completely disappearing at room temperature.…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides
