Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

TL;DR

This paper compares silicon nitride resistive memory cells on SOI and bulk Si substrates, demonstrating SOI's advantages in endurance, variability, retention, and data stability through experimental analysis.

Contribution

It provides a comparative study showing the benefits of SOI substrates over bulk Si for resistive memory cells with silicon nitride dielectric.

Findings

SOI substrates improve cycling endurance.

SOI reduces cell-to-cell variability.

SOI enhances retention and data stability.

Abstract

In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is demonstrated. Comprehensive experimental investigations reveal the advantage of SOI substrate over bulk Si in terms of cycling endurance, cell-to-cell variability, retention and data loss rate.