Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic

TL;DR

This paper presents a novel silicon nitride resistive memory crossbar array on SOI, enabling multi-state memristor logic circuits with potential for reconfigurable and power-efficient computing.

Contribution

It introduces a fabrication method for silicon nitride memristor crossbars on SOI and demonstrates their use in multi-rationed logic circuits with detailed modeling and simulation.

Findings

Memristors exhibit 12 distinct resistance levels.

Reconfigurable logic schemes are designed based on memristor states.

Power optimization prospects are discussed through SPICE simulations.

Abstract

In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circuits are presented. Typical electrical characterization of the memristors revealed their ability of multi-state operation by the presence of 12 well separated resistance levels. Through a dedicated modeling and fitting procedure of these levels, a reconfigurable logic based on memristor rationed logic scheme is designed and a crossbar integration methodology was proposed. Finally, several circuitry aspects were simulated in SPICE with a silicon nitride SOI crossbar array calibrated model and power optimization prospects were discussed.