Effect of SOI substrate on silicon nitride resistance switching using MIS structure

TL;DR

This study investigates how using SOI substrates affects the resistive switching behavior of silicon nitride-based MIS devices, comparing their performance with devices on bulk silicon to evaluate CMOS compatibility.

Contribution

It introduces a CMOS-compatible fabrication process for SiN-based RRAM devices on SOI substrates and compares their electrical performance with bulk silicon devices.

Findings

SOI substrates influence resistive switching characteristics

Devices on SOI show comparable or improved performance

Enhanced CMOS integration potential for SOI-based RRAM

Abstract

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.