Strain-induced proximity effect in topological insulator TaSe$_3$
R.M. Lukmanova, I.A. Cohn, V.E. Minakova, and S.V. Zaitsev-Zotov

TL;DR
This study investigates how uniaxial strain influences the proximity effect in topological insulator TaSe$_3$, revealing strain-dependent superconductivity suppression and surface state transitions through magnetoresistance measurements.
Contribution
It demonstrates the strain-induced modulation of the proximity effect and surface states in TaSe$_3$, providing experimental evidence for topological phase transitions.
Findings
Resistance steps occur at ~0.1 T due to superconductivity suppression.
Surface states are present within 0.46% to 0.85% strain range.
Strain induces a transition sequence: semi-metal to topological insulator to trivial insulator.
Abstract
The magnetoresistance of superconductor-topological insulator-superconductor structures, with indium as the superconductor and TaSe as the topological insulator, shows steplike features on the resistance under magnetic fields. These resistance steps are resulted from the suppression of superconductivity, induced by the superconducting proximity effect in both the bulk and surface states of the topological insulator. The position and amplitude of the steps, occurring at approximately 0.1 T, show an unusual dependence on the magnitude of the uniaxial strain (), indicating their connection with surface states. This behavior follows the expected transition sequence: semi-metal strong topological insulator trivial insulator, and supports the presence of surface states at .
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Diamond and Carbon-based Materials Research
