Effect of Silicon Atom Doping in SiNx Resistive Switching Films

TL;DR

This study investigates how silicon atom doping via ultra-low energy ion implantation and annealing affects the electrical switching properties of SiNx resistive switching films, revealing insights into conduction mechanisms and dielectric behavior.

Contribution

It introduces a method of Si doping in SiNx films and analyzes its impact on switching characteristics and dielectric properties, providing new understanding of doping effects.

Findings

Silicon doping modifies switching behavior.

Annealing temperature influences device performance.

Impedance spectroscopy reveals conduction mechanisms.

Abstract

Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization and dielectric breakdown measurements are used to identify the main switching properties and performance of the fabricated devices and the effect that the Si dopants and annealing temperature have. In addition, impedance spectroscopy measurements revealed the dielectric properties of the silicon nitride films, as well as the ac conductance, which is utilized to identify the conduction mechanisms.