1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

TL;DR

This study investigates the noise characteristics of single-layer graphene devices with interdigitated electrodes, revealing how geometry influences 1/f noise and RTN, which are linked to carrier trapping phenomena.

Contribution

It provides experimental insights into how device geometry affects noise behavior in graphene sensors, highlighting the importance of design parameters.

Findings

1/f noise observed across all devices

RTN signals indicate carrier trapping/de-trapping

Device geometry impacts noise levels

Abstract

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.