Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
A.E. Mavropoulis, N. Vasileiadis, P. Normand, C. Theodorou, G. Ch., Sirakoulis, S. Kim, P. Dimitrakis
TL;DR
This paper investigates how a 3 nm Al2O3 layer influences the electrical behavior and filament formation in SiNx-based MIS RRAM devices, providing insights into their operation and conduction mechanisms.
Contribution
It introduces a detailed analysis of Al2O3's impact on SiNx RRAMs and employs a compact model to understand filament evolution during switching cycles.
Findings
Al2O3 layer affects filament formation and device switching behavior
A compact model accurately fits current-voltage characteristics
Conduction mechanisms in SiNx are characterized
Abstract
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
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