Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance

TL;DR

This paper introduces electric quadrupole spin resonance (EQSR) as a novel method for controlling electron spins in silicon quantum dots, addressing limitations of traditional electric dipole spin resonance (EDSR) for quantum computing.

Contribution

The study proposes and explores EQSR, a new approach that incorporates quadrupolar effects to improve spin control in silicon quantum dots, surpassing EDSR capabilities.

Findings

EQSR effectively models Rabi behavior in silicon quantum dots.

Quadrupolar contributions enhance spin manipulation precision.

Experimental analysis on 5 and 13 electron occupancies demonstrates EQSR's potential.

Abstract

Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance (ESR). In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance (EDSR) is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a new method of electric spin qubit control which generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance (EQSR). In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies.