Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics

TL;DR

This paper demonstrates how LSMO memristors exhibit negative differential resistance states that enable neuromorphic functionalities like oscillations and neuron-like firing, advancing energy-efficient computing hardware.

Contribution

It introduces a novel approach to induce and control NDR states in LSMO memristors for neuromorphic applications, supported by material-based modeling.

Findings

Two distinct NDR states achieved in LSMO memristors.

Demonstration of oscillatory dynamics at different frequencies.

Implementation of leaky integrate-and-fire neuron behavior.

Abstract

The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing anisotropic functional properties in LSMO on a twinned LAO substrate and driving it out of thermodynamic equilibrium, we demonstrate two distinct negative differential resistance states in such volatile memristors. These were harnessed to exhibit oscillatory dynamics in LSMO at different frequencies and an artificial neuron with leaky integrate-and-fire dynamics. A material based modelling incorporating bond angle distortions in neighboring perovskites and capturing the inhomogeneity of domain distribution and propagation explains both the NDR regimes. Our findings establish LSMO as an important material for neuromorphic computing hardware.