Quantum effects in surface diffusion: application to diffusion of nitrogen adatoms over GaN(0001) surface

TL;DR

This paper demonstrates that quantum effects significantly influence nitrogen adatom diffusion on GaN(0001), affecting energy barriers and diffusion paths, with implications for GaN growth mechanisms.

Contribution

It reveals how quantum state energy changes and electron redistribution impact nitrogen diffusion barriers on GaN surfaces, a novel insight into surface diffusion at the quantum level.

Findings

Quantum effects alter diffusion energy barriers.

Electron redistribution influences diffusion paths.

Barrier reduction due to quantum statistics effects.

Abstract

It is shown that quantum effects play determining role in nitrogen adatom diffusion due to several different factors. This could be related to the change of the energy of the quantum states and also due to the redistribution of electrons between the quantum states, both full and resonant, via quantum statistics partially governed by the Fermi energy level. These effects were studied in the case of nitrogen diffusion over clean and gallium covered Ga-terminated GaN(0001) surface. For the fractional coverage the density functional theory (DFT) calculations show that at the saddle point configuration the redistribution of electrons between different quantum states may affect the surface diffusion barrier significantly. The other quantum influence occurs via the change of the minimal energy configuration. Under fractional Ga coverage of GaN(0001) surface the nitrogen diffusion energy barrier proceeds from the resonant states governed energy minimal H3 site across the saddle point in the bridge configuration. At this path the barrier is affected the electron redistribution between surface quantum states both in the initial and the saddle point. In the case of the full GaN coverage the diffusion path is from on-top N adatom configuration via H3 site that corresponds to maximal energy. Therefore the diffusion barrier is Ebar= 1.18 eV for clean and Ebar= 0.92 eV for (1/6) ML to finally Ebar= 1.23 eV for full Ga coverage. Thus the overall barrier is reduced to Ebar= 0.92 eV due to quantum statistics effects. The identified stable N on-top configuration for the full coverage is essential for atomic mechanism of GaN growth in Ga-rich regime.