The development of IBIC microscopy at the 100 kV ion implanter of the University of Torino (LIUTo) and the application for the assessment of the radiation hardness of a silicon photodiode

TL;DR

This paper describes the upgrade of a 100 kV ion implanter for IBIC microscopy at the University of Torino, enabling surface-sensitive analysis of semiconductor devices and demonstrating its application in assessing radiation damage in silicon photodiodes.

Contribution

It introduces a novel keV-IBIC technique upgrade and demonstrates its use in evaluating radiation hardness of silicon photodiodes.

Findings

Successful upgrade of the ion implanter for keV-IBIC.

First application of keV-IBIC for radiation damage assessment.

Potential for surface-sensitive semiconductor characterization.

Abstract

The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes, which provide both measurable induced charge signals from single ions, and high spatial resolution, which is maintained along the ion range. It is a fact, however, that the use of low-energy ions in the keV range can provide the IBIC technique with complementary analytical capabilities, that are not available with MeV ions, for example the higher sensitivity to the status, contamination and morphology of the surface and the fact that the induced signal depends on the transport of only one type of charge carrier. This paper outlines the upgrade that was made at the 100 kV ion implanter of the University of Torino, originally installed for material and surface modification, to explore the rather unexplored keV-IBIC field and to assess its potential to characterize semiconductor devices. Finally, we report the first IBIC application of our apparatus, which regards the assessment of the radiation damage of a commercially available silicon photodiode, adopting the IAEA experimental protocol and the relevant interpretative model.