Universal transport at Lifshitz metal-insulator transitions in two dimensions
Harry Tomlins, Jan M. Tomczak

TL;DR
This paper investigates charge transport near Lifshitz metal-insulator transitions in two dimensions, deriving an analytical formula for conductivity, confirming experimental results, and predicting a universal resistance value at the quantum-critical point.
Contribution
It introduces an analytical formula for conductivity in 2D systems near Lifshitz transitions, explaining quantum effects and proposing a universal resistance at the critical point.
Findings
Analytical formula matches experimental data for MoTe2/WSe2 bilayers.
Quantum effects break classical scaling relations.
Universal resistance value at the Lifshitz critical point is consistent with experiments.
Abstract
We study the charge transport across a band-tuned metal-insulator transition in two dimensions. For high temperatures and chemical potentials far from the transition point, conduction is ballistic and the resistance verifies a simple one-parameter scaling relation. Here, we explore the limits of this semi-classical behaviour and study the quantum regime beyond, where scaling breaks down. We derive an analytical formula for the simplest Feynman diagram of the linear-response conductivity of a parabolic band endowed with a finite lifetime. Our formula shows excellent agreement for experiments for a field-tuned MoTe/WSe moir\'e bilayer, and can capture the quantum effects responsible for breaking the one-parameter scaling. We go on to discuss a fascinating prediction of our model: The resistance at the quantum-critical band-tuned Lifshitz point…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Electron and X-Ray Spectroscopy Techniques
