Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors

TL;DR

This study explores how humidity affects the resistive switching behavior of hexagonal boron nitride-based memristors with nickel electrodes, revealing environmental sensitivity crucial for their integration in vacuum-processed semiconductor devices.

Contribution

It demonstrates the environmental dependence of resistive switching in h-BN memristors and provides a compact model predicting switching suppression in water-deficient environments.

Findings

Switching occurs under ambient conditions but is suppressed in vacuum.

Model simulations align with experimental suppression in water-deficient environments.

Implications for vacuum-processed semiconductor device integration.

Abstract

Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window > 10${^3}$ under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences.