Magnon-mediated perpendicular magnetization switching by topological crystalline insulator SnTe with high spin Hall conductivity

TL;DR

This study demonstrates room-temperature, low-power perpendicular magnetization switching using magnon torques in SnTe-based heterostructures, leveraging high spin Hall conductivity in topological crystalline insulators.

Contribution

It introduces a novel magnon-mediated magnetization switching method at room temperature using SnTe, a topological crystalline insulator with high spin Hall conductivity.

Findings

Achieved 22-fold reduction in power consumption compared to control samples.

Demonstrated magnon-mediated switching at room temperature.

Established SnTe as a promising material for low-power spintronic devices.

Abstract

Magnons possess the ability to transport spin angular momentum in insulating magnetic materials, a characteristic that sets them apart from traditional electronics where power consumption arises from the movement of electrons. However, the practical application of magnon devices demands room temperature operation and low switching power of perpendicular magnetization. Here we demonstrate the low-power manipulation of perpendicular magnetization via magnon torques in SnTe/NiO/CoFeB devices at room temperature. Topological crystalline insulator SnTe exhibits a high spin Hall conductivity of $\sigma_s \approx 6.1\times 10^4 (\hbar/2e)\cdot (\Omega \cdot m)^{-1}$, which facilitates the generation of magnon currents in an antiferromagnetic insulator NiO. The magnon currents traverse the 20-nm-thick NiO layer and subsequently exert magnon torques on the adjacent ferromagnetic layer, leading to magnetization switching. Notably, we achieve a 22-fold reduction in power consumption in SnTe/NiO/CoFeB heterostructures compared to Bi2Te3/NiO/CoFeB control samples. Our findings establish the low-power perpendicular magnetization manipulation through magnon torques, significantly expanding the range of topological materials with practical applications.