Thermal and dimensional stability of photocatalytic material ZnPS$_3$ under extreme environmental conditions
Abhishek Mukherjee, Vivian J. Santamar\'ia-Garc\'ia, Damian, Wlodarczyk, Ajeesh K. Somakumar, Piotr Sybilski, Ryan Siebenaller, Emmanuel, Rowe, Saranya Narayanan, Michael A. Susner, L. Marcelo Lozano-Sanchez,, Andrzej Suchocki, Julio L. Palma, and Svetlana V. Boriskina

TL;DR
This study demonstrates that ZnPS$_3$ exhibits exceptional stability and tunable electronic properties under extreme pressure and cryogenic temperatures, making it suitable for sensing applications in harsh environments.
Contribution
It provides comprehensive experimental and theoretical analysis of ZnPS$_3$'s stability and phase transitions under extreme conditions, revealing its potential for extreme environment sensing.
Findings
Pressure-induced phase transition at 6.75 GPa
Stable across 15 to 100 GPa with a predicted semiconductor-to-semimetal transition at 100 GPa
High thermal expansion coefficient indicating sensitivity to temperature changes
Abstract
Zinc phosphorus trisulfide (ZnPS), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. We explore its optical and structural properties under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). Our results identify a pressure-induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS demonstrates robust stability across a broad pressure range of 15 to 100 GPa. DFT calculations predict a semiconductor-to-semimetal transition at 100 GPa, while PL measurements reveal defect-assisted emissions that quench under pressure due to enhanced non-radiative recombination. At cryogenic temperatures, PL quenching intensifies as non-radiative processes dominate, driven by a rising…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films
