Single crystal growth of 1T-VSe$_2$ by molten salt flux method
Muhammed Anees K T, Souvik Kumar Rana, Abinash Das, Moumita Nandi

TL;DR
This paper reports the successful growth of high-quality 1T-VSe$_2$ single crystals using a molten salt flux method, enabling further exploration of its electronic and spintronic properties.
Contribution
It introduces a novel flux method for growing large, high-quality 1T-VSe$_2$ single crystals with confirmed phase and composition.
Findings
Crystals are approximately 5x4x0.1 mm^3 in size.
Elemental analysis confirms stoichiometry of VSe$_2$.
Resistivity measurements reveal a charge density wave transition at 104 K.
Abstract
VSe is a highly promising van der Waals (vdW) material for applications in electronics, spintronics, and optoelectronics. Here, we report single crystal growth of 1T-VSe by flux method using eutectic of NaCl/KCl molten salt. The typical size of as-grown VSe single crystals is 5 4 0.1~mm. The elemental composition and homogeneity of the crystals were examined by energy dispersive x-ray spectroscopy, which is consistent with the stoichiometric ratio of VSe. The crystallographic [001] direction has been determined by x-ray diffraction. Raman measurement confirms that the 1T phase of VSe has been formed. Temperature-dependent resistivity measurement exhibits a transition around 104 K due to the formation of the charge density wave phase.
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films
