Microtubes and nanomembranes by ion-beam-induced exfoliation of $\beta$-Ga$_{2}$O$_{3}$
Duarte Magalh\~aes Esteves, Ru He, Calliope Bazioti, S\'ergio Magalh\~aes, Miguel Carvalho Sequeira, Lu\'is Filipe Santos, Alexander Azarov, Andrej Kuznetsov, Flyura Djurabekova, Katharina Lorenz, Marco Peres

TL;DR
This paper introduces a novel ion-beam process to create $eta$-Ga$_{2}$O$_{3}$ microtubes and nanomembranes, enabling scalable, dopable, and high-quality nanostructures for various applications.
Contribution
It demonstrates a new ion implantation technique for fabricating and transferring $eta$-Ga$_{2}$O$_{3}$ nanostructures with controlled doping and improved reproducibility.
Findings
Microtubes form via strain-induced rolling under specific irradiation conditions.
Nanomembranes can be unrolled and transferred after annealing.
Damage from ion implantation can be effectively recovered at ~500°C.
Abstract
This paper reports an innovative process to fabricate -GaO microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, under specific flux and fluence conditions, the irradiation-induced strain profile promotes the detachment and rolling-up of a thin surface layer, forming a microtube. The strain-disorder interplay was investigated in detail for Cr-implanted -GaO with a range of complementary methods, showing an excellent agreement between experimental and simulation data, and suggesting an exfoliation mechanism that is correlated with the anisotropic nature of the -GaO monoclinic system and its easy-cleavage planes. Moreover, these microtubes can be unrolled upon a subsequent annealing step, resulting in nanomembranes with bulk-like crystalline quality that can be transferred to other…
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