Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

TL;DR

This paper reviews the fundamental properties, fabrication techniques, and recent advancements in quantum emitters within hexagonal boron nitride, emphasizing their potential in quantum information science and integration with photonic structures.

Contribution

It provides a comprehensive overview of the principles, engineering methods, and emerging applications of hBN quantum emitters, highlighting recent progress and future challenges.

Findings

Enhanced optical properties through cavity integration

Identification of new spin-active defect classes

Potential for scalable quantum information applications

Abstract

Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional lattice of the material formed by the extremely strong B-N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science.