Electrically-triggered spin-photon devices in silicon
Michael Dobinson, Camille Bowness, Simon A. Meynell, Camille Chartrand, Elianor Hoffmann, Melanie Gascoine, Iain MacGilp, Francis Afzal, Christian Dangel, Navid Jahed, Michael L. W. Thewalt, Stephanie Simmons, Daniel B. Higginbottom

TL;DR
This paper demonstrates electrically-triggered single-photon emission and spin initialization from silicon T centres, advancing scalable quantum technology platforms with integrated optoelectronic devices.
Contribution
It introduces the first electrically-injected single-photon source and spin control method in silicon T centres, enabling scalable quantum networks and processors.
Findings
Single-photon electroluminescence observed with g^{(2)}(0)=0.05(2)
Achieved 92(8)% fidelity in spin state initialization
Demonstrated electrically-triggered emission in silicon T centres
Abstract
Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range of qubits. Architectures based on spin-photon interfaces allow for highly-connected quantum networks over photonic links, enabling entanglement distribution for quantum networking and distributed quantum computing protocols. With the potential to address these demands, optically-active spin defects in silicon are one proposed platform for building quantum technologies. Here, we electrically excite the silicon T centre in integrated optoelectronic devices that combine nanophotonic waveguides and cavities with p-i-n diodes. We observe single-photon electroluminescence from a cavity-coupled T centre with . Further, we use the…
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