Electroluminescence in n-type GaAs unipolar nanoLEDs

TL;DR

This paper reports the observation of electroluminescence from n-type GaAs nanoLEDs with nanopillar structures, demonstrating their potential as a new class of nanoscale light-emitting devices with measurable efficiency.

Contribution

The study introduces n-i-n GaAs nanoLEDs with quantum well structures that exhibit electroluminescence, a novel approach for n-type nanoscale light emitters.

Findings

Electroluminescence observed at 866 nm from n-GaAs nanoLEDs.

Internal quantum efficiency exceeds 2% at sub-milliampere currents.

Decay lifetimes longer than 300 ps indicating efficient emission.

Abstract

In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices.