Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

TL;DR

This study demonstrates room-temperature bias voltage-induced inversions of tunneling magnetoresistance in Fe3GaTe2/hBN/Fe3GaTe2 heterostructures, advancing understanding of voltage-controlled spintronic functionalities in 2D materials.

Contribution

It introduces a theoretical model that explains TMR inversion by considering spin-resolved DOS and structural misalignments, providing insights into voltage-controlled spin injection in 2D magnetic tunnel junctions.

Findings

TMR inversion occurs consistently at around 0.625 V at room temperature.

Theoretical model incorporating DOS and structural misalignment matches experimental data.

The effect demonstrates potential for energy-efficient spintronic devices.

Abstract

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.