A High-accuracy Calibration Method of Transient TSEPs for Power Semiconductor Devices
Qinghao Zhang, Wenrui Li, Pinjia Zhang

TL;DR
This paper introduces a high-accuracy calibration method for transient TSEPs in power semiconductor devices, significantly improving temperature monitoring accuracy without extra hardware costs.
Contribution
It proposes a novel calibration approach that accounts for load-induced temperature differences and stray parameters, utilizing neural networks for improved junction temperature prediction.
Findings
Mean absolute error reduced by over 30%
Effective temperature compensation strategy implemented
Method shows good generalization without extra hardware
Abstract
The thermal sensitive electrical parameter (TSEP) method is crucial for enhancing the reliability of power devices through junction temperature monitoring. The TSEP method comprises three key processes: calibration, regression, and application. While significant efforts have been devoted to improving regression algorithms and increasing TSEP sensitivity to enhance junction temperature monitoring accuracy, these approaches have reached a bottleneck. In reality, the calibration method significantly influences monitoring accuracy, an aspect often overlooked in conventional TSEP methods. To address this issue, we propose a high-accuracy calibration method for transient TSEPs. First, a temperature compensation strategy based on thermal analysis is introduced to mitigate the temperature difference caused by load current during dual pulse tests. Second, the impact of stray parameters is…
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies
