Novel magnetic-field-free switching behavior in vdW-magnet/oxide heterostructure
Jihoon Keum, Kai-Xuan Zhang, Suik Cheon, Hyuncheol Kim, Jingyuan Cui,, Giung Park, Yunyeong Chang, Miyoung Kim, Hyun-Woo Lee, and Je-Geun Park

TL;DR
This paper introduces a novel magnetic-field-free switching mechanism in a vdW-magnet/oxide heterostructure, leveraging interface spin precession and spin-orbit torque, advancing spintronics technology.
Contribution
It demonstrates the first fabrication of a vdW magnet and oxide heterostructure enabling magnetic-field-free switching via interface spin precession.
Findings
Successful fabrication of Fe3GeTe2/SrTiO3 heterostructure.
Observation of out-of-plane spin polarization through spin precession.
Controlled switching polarity with in-plane magnetic fields.
Abstract
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, we demonstrate a new approach for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe3GeTe2/SrTiO3 heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane…
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Taxonomy
TopicsMagnetic and transport properties of perovskites and related materials · Shape Memory Alloy Transformations
