Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures

TL;DR

This paper demonstrates room-temperature, field-free perpendicular magnetization switching in TaIrTe4/ferromagnet heterostructures using spin-orbit torque, achieving low critical current density suitable for spintronic devices.

Contribution

It introduces a novel method for field-free magnetization switching using Weyl semimetal TaIrTe4, reducing the critical current density at room temperature.

Findings

Achieved field-free perpendicular magnetization switching at room temperature.

Lowered critical switching current density to approximately 2.64×10^5 A/cm^2.

Demonstrated potential for high-density, low-power spintronic applications.

Abstract

Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve field-free deterministic switching of perpendicular magnetization, additional magnetic field, magnetic layer assistance, or artificially designed structural symmetry breaking are usually required, which are not conducive to the high-density integration and application of low-power devices. However, 2D Weyl semimetals with low-symmetry structures have recently been found to generate z-spin-polarized currents, which may induce out-of-plane damping-like torques to their neighboring ferromagnetic layers, and realize deterministic perpendicular magnetization switching at zero magnetic field. In this Letter, we report that current-induced field-free magnetization switching at room temperature can be achieved in a perpendicularly magnetized TaIrTe4/Pt/Co/Pt device, and the critical switching current density can be lowered to be about 2.64*105 Acm-2. This study suggests that TaIrTe4 has great potential for the design of room-temperature efficient spintronic devices.