Terahertz-driven ultrafast dynamics of rare-earth nickelates by controlling only the charge degree of freedom

TL;DR

This study demonstrates that intense terahertz pulses can selectively induce and control ultrafast electronic phase transitions in rare-earth nickelates by targeting only the charge degree of freedom, revealing new insights into their strongly correlated physics.

Contribution

It provides the first detailed investigation of THz-driven ultrafast dynamics in rare-earth nickelates, showing charge-only control of the insulator-metal transition without phonon involvement.

Findings

THz pulses induce instantaneous insulator-metal transition via quantum tunneling.

Relaxation involves electron-phonon thermalization and charge state recovery.

Absence of acoustic phonon modes indicates charge-only excitation.

Abstract

An important strategy for understanding the microscopic physics of strongly correlated systems and enhancing their technological potential is to selectively drive the fundamental degrees of freedom out of equilibrium. Intense terahertz (THz) pulses with photon energies of a few meV, can not only serve this purpose but also unravel their electronic and quantum nature. Here, we present THz-driven ultrafast dynamics of rare-earth nickelates $\text{RNiO}_{\text{3}}$, $\text{R}$ = rare-earth atom) - a prototype system to study the Mott insulator-metal transition (IMT). The THz drive of its Mott insulating state induces instantaneous IMT via quantum tunneling of valence electrons across the bandgap while the THz drive of its correlated metallic state leads to overall heating of the conduction electrons. The subsequent relaxations of excited electrons in these two states occur via a two-step process (electron-phonon thermalization and recovery of the charge-ordered insulating state) and a one-step process (electron-phonon scattering), respectively. The relaxation dynamics of the electrons and the absence of acoustic phonon modes, in particular, suggest that the THz photons drive only the charge degree of freedom. The purely electronic, ultrafast and local nature of the THz-induced IMT offers its applications in opto-electronics with enhanced performance and minimal device size and heat dissipation.