Nonrelativistic spin-splitting multiferroic antiferromagnet and compensated ferrimagnet with zero net magnetization

TL;DR

This paper identifies and analyzes multiferroic spin-splitting antiferromagnets with zero net magnetization, demonstrating electric control of their spin polarization for potential spintronic applications.

Contribution

It establishes design principles for spin-splitting multiferroic antiferromagnets and shows how ferroelectric polarization can switch spin polarization despite zero net magnetic moment.

Findings

Identified prototypes like BiFeO3, Fe2Mo3O8, GaFeO3 with spin-polarized electronic structures.

Demonstrated electric control of spin polarization via ferroelectric polarization.

Provided design principles based on band symmetry features.

Abstract

Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and spin-polarized transport properties akin to ferromagnets, making them promising candidates for antiferromagnetic spintronics. However, unlike spin-torque switching of ferromagnets by electric current, efficient electric control of spin-splitting antiferromagnetic order remains challenges. In this work, we identify prototypes of multiferroic spin-splitting antiferromagnets, including BiFeO3, Fe2Mo3O8 and compensated ferrimagnet GaFeO3 with ferroelectric polarization as well as spin-polarized electronic structures. We establish design principles for the spin-splitting multiferroic antiferromagnets and compensated ferrimagnets, elucidating the band symmetry features in Brillouin zone. We demonstrate that the spin polarization in spin-splitting magnets, despite of zero net magnetic moment, can be switched by ferroelectric polarization, providing an efficient means of controlling the antiferromagnetic order. Our work may inspire future development of novel multiferroic functional magnets with zero magnetic moments and pave the way for their applications in magnetoelectric spintronic devices.