Ultra-fast, high-power MUTC Photodiodes with bandwidth-efficiency product over 130 GHz * 100%
Linze Li, Tianyu Long, Xiongwei Yang, Zhouze Zhang, Luyu Wang, Jingyi, Wang, Mingxu Wang, Juanjuan Lu, Jianjun Yu, Baile Chen

TL;DR
This paper presents a novel InP-based MUTC photodiode with over 200 GHz bandwidth and a high bandwidth-efficiency product, enabling ultra-fast, energy-efficient wireless communication at sub-terahertz frequencies.
Contribution
The work introduces a waveguide-integrated MUTC photodiode with optimized design achieving record-breaking bandwidth-efficiency product over 130 GHz * 100%, surpassing previous limits.
Findings
Achieved 206 GHz 3-dB bandwidth and 0.8 A/W responsivity.
Delivered RF power over -5 dBm from 127 to 185 GHz.
Demonstrated 120 Gbps wireless data transmission over 54 meters.
Abstract
The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub-THz) sources to enable ultra-fast data transfer. However, as critical components for THz photonic mixing, photodiodes (PDs) face a fundamental trade-off between quantum efficiency and bandwidth, presenting a major obstacle to achieving high-speed performance with high optoelectronic conversion efficiency. Here, we overcome this challenge by demonstrating an InP-based, waveguide-integrated modified uni-traveling carrier photodiode (MUTC-PD) with a terahertz bandwidth exceeding 200 GHz and a bandwidth-efficiency product (BEP) surpassing 130 GHz * 100%. Through the integration of a spot-size converter (SSC) to enhance external responsivity, alongside optimized electric field distribution, balanced carrier transport, and minimized parasitic capacitance, the device achieves…
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Taxonomy
TopicsPhotonic and Optical Devices · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
