Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells

TL;DR

This paper predicts a polarization-driven quantum spin Hall insulator in InAs quantum wells and proposes novel topological devices, including a logic device and a high-performance transistor, leveraging edge states without phase transitions.

Contribution

It introduces a new polarization-induced QSHI in InAs quantum wells and designs topological devices that operate without phase transitions, advancing topological electronics.

Findings

Prediction of polarization-induced QSHI in InAs wells

Design of a topological logic device without phase transition

Development of a high-performance topological transistor

Abstract

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices.