Landau-Levich Scaling for Optimization of Quantum Dot Layer Morphology and Thickness for Enhanced Quantum-Dot Light-Emitting Diode Performance

TL;DR

This paper demonstrates how controlling blade-coating speed within the Landau-Levich regime can precisely optimize quantum dot layer morphology and thickness, significantly improving the efficiency and scalability of quantum-dot LEDs.

Contribution

It introduces a method to control quantum dot film thickness and morphology via blade speed in the Landau-Levich regime, enabling scalable production of high-quality QLEDs.

Findings

Achieved 1.5% EQE with commercial QDs

Achieved 7% EQE with lab-made QDs

Demonstrated uniform QD layers with low roughness

Abstract

Quantum dot (QD) light-emitting diodes (QLEDs) are promising candidates for next-generation displays because of their high efficiency, brightness, broad color gamut, and solution-processability. Large-scale solution-processing of electroluminescent QLEDs poses significant challenges, particularly concerning the precise control of the active layer's thickness and uniformity. These obstacles directly impact charge transport, leading to current leakage and reduced overall efficiency. Blade-coating is a prevalent and scalable solution processing technique known for its speed and minimal waste. Additionally, it allows for continuous "roll-to-roll" processing, making it highly adaptable in various applications. In this study, we demonstrate the precise control of blade speed in the Landau-Levich regime to create a uniform QD emission layer, using a commercial CdSe/ZnS QD as a representative example. QDs assemble into different morphologies on glass and the underlying layers of the QLED device due to variations in interaction energy. The QD film thickness can be modified from monolayer to multilayer by adjusting blade speed, which can be predicted by fitting the Landau-Levich-Derjaguin theory. The optimal speed at 7 mm/s results in a QD film with a surface coverage of around 163% and low roughness (1.57 nm mean square height). The QLED external quantum efficiency (EQE) of approximately 1.5% was achieved using commercially available CdSe/ZnS QDs with low photoluminescence quantum yield (PLQY), and an EQE of around 7% has been obtained using lab-made InP/ZnSe/ZnS QDs having a solution PLQY of 74%. All-blade-coated CdSe-QLEDs are further demonstrated by adopting the optimized speed for the QD layer. This method demonstrates significant potential for developing low-cost, reproducible, and scalable QLED technologies with uniform emission characteristics and low-waste production.