Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices
Divya Kaushik, Nitin Kumar, Harshit Sharma, Pukhraj Prajapat,, Mehamalini V., G.Sambandamurthy, and Ritu Srivastava

TL;DR
This paper demonstrates a ZIF-8 based ReRAM device with stable, tunable resistive switching, suitable for non-volatile memory and neuromorphic computing, utilizing a simple room-temperature solution process.
Contribution
It introduces a novel ZIF-8 MOF-based ReRAM device with stable, tunable resistive switching and potential for multi-level memory and neuromorphic applications.
Findings
Bipolar resistive switching with a 100 on/off ratio
Stable retention up to 10,000 seconds and performance over 60 cycles
Robust thermal stability from -20°C to 100°C
Abstract
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive switching (RS) performance, while hybrid materials like metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device utilizing zeolitic imidazolate framework (ZIF-8), a MOF material, as the resistive switching layer. The ZIF-8 film was synthesized via a simple solution process method at room temperature and subsequently characterized. The Al/ZIF-8/ITO device demonstrates bipolar resistive switching behaviour with an on/off resistance ratio of 100, stable retention up to 10000 seconds, and consistent performance…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Analytical Chemistry and Sensors · Conducting polymers and applications
