Strain-Induced Activation of Symmetry-Forbidden Exciton-Phonon Couplings for Enhanced Phonon-Assisted Photoluminescence in MoS$_2$ Monolayers
Rishabh Saraswat, Rekha Verma, Sitangshu Bhattacharya

TL;DR
This study demonstrates that applying biaxial strain to MoS$_2$ monolayers activates forbidden exciton-phonon interactions, significantly enhancing phonon-assisted photoluminescence, which could improve optoelectronic device performance.
Contribution
The paper reveals how strain engineering activates symmetry-forbidden exciton-phonon couplings in MoS$_2$, enabling stronger phonon-assisted photoluminescence through ab-initio calculations and group-theoretic analysis.
Findings
Strain activates previously forbidden phonon-assisted emission channels.
Biaxial strain redistributes oscillator strength toward radiative recombination.
Enhanced PL emission observed at cryogenic temperatures with strain application.
Abstract
Phonon-assisted photoluminescence (PL) in molybdenum-based two-dimensional dichalcogenides is typically weak due to the dormant phonon coupling with optically inactive momentum-dark (intervalley) excitons, unlike in tungsten-based dichalcogenides where such processes are more prominent. Despite this inefficiency, we revisit excitons in MoS using rigorous finite-momentum Bethe-Salpeter equation calculations to identify ways to enhance phonon-assisted recombination channels. Our ab-initio results, complemented by group-theoretic analyses, reveal that while unstrained MoS exhibits no phonon-assisted PL emissions at cryogenic temperatures due to forbidden A phonon modes, biaxial strain opens a pathway to significantly intensify this emission by activating hole-phonon A-mediated scattering channels. By calculating allowed exciton-phonon matrix elements and…
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Taxonomy
Topics2D Materials and Applications · Semiconductor Quantum Structures and Devices · Perovskite Materials and Applications
