TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design
Yifei Zhou, Thomas K\"ampfe, Kai Ni, Hussam Amrouch, Cheng Zhuo,, Xunzhao Yin

TL;DR
TReCiM is a novel multibit 2FeFET-1T compute-in-memory design that offers high temperature resilience and low power consumption for AI applications, improving accuracy and efficiency over existing 1-bit solutions.
Contribution
It introduces a temperature-resilient multibit 2FeFET-1T CiM architecture that maintains accuracy across 0-85°C and enhances energy efficiency for neural network computations.
Findings
Achieves 91.31% accuracy on CIFAR-10 with temperature drift considerations.
Provides 48.03 TOPS/W energy efficiency at system level.
Improves accuracy by 1.86% over existing 1-bit 2T-1FeFET arrays.
Abstract
Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM) devices in a crossbar structure, CiM efficiently accelerates multiply-accumulate (MAC) computations, the crucial operations in neural networks and other AI models. Among various NVM devices, Ferroelectric FET (FeFET) is particularly appealing for ultra-low-power CiM arrays due to its CMOS compatibility, voltage-driven write/read mechanisms and high ION/IOFF ratio. Moreover, subthreshold-operated FeFETs, which operate at scaling voltages in the subthreshold region, can further minimize the power consumption of CiM array. However, subthreshold-FeFETs are susceptible to temperature drift, resulting in computation accuracy degradation. Existing solutions…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing · Semiconductor materials and devices
