Strain Mediated Voltage Control of Magnetic Anisotropy and Magnetization Reversal in Bismuth Substituted Yttrium Iron Garnet Films and Meso-structures

TL;DR

This study demonstrates voltage-induced strain can modulate magnetic anisotropy and enable magnetization switching in Bi-YIG films on piezoelectric substrates, promising for energy-efficient memory and computing applications.

Contribution

It introduces a method for voltage control of magnetic properties in Bi-YIG films using strain from a piezoelectric substrate, with significant magnetoelastic effects and potential device applications.

Findings

Voltage induces magnetic anisotropy modulation in Bi-YIG films.

Voltage-controlled 90° magnetization switching observed.

Magnetoelectric coefficient comparable to other ferromagnetic/ferroelectric heterostructures.

Abstract

We report on magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi-YIG) thin films and mesoscale patterned structures deposited on a PMN-PT substrate with the application of voltage-induced strain. The Bi content is selected for low coercivity and higher magnetostriction than that of YIG, yielding significant changes in the hysteresis loops through the magnetoelastic effect. The piezoelectric substrate is poled along its thickness, which is the [011] direction, by applying a voltage across the PMN-PT/SiO2/Bi-YIG/Pt heterostructure. In-situ magneto-optical Kerr effect microscopy (MOKE) shows the modulation of magnetic anisotropy with voltage-induced strain. Furthermore, voltage control of the magnetic domain state of the Bi-YIG film at a fixed magnetic field produces a 90{\deg} switching of the magnetization easy axis above a threshold voltage. The magnetoelectric coefficient of the heterostructure is 1.05x10^(-7)s/m which is competitive with that of other ferromagnetic oxide films on ferroelectric substrates such as La0.67Sr0.33MnO3/PMNPT and YIG/PMN-PZT. Voltage-control of magnetization reversal fields in 5-30 microns wide dots and racetracks of Bi-YIG show potential for energy efficient non-volatile memory and neuromorphic computing devices.