Electronic Noise Considerations for Designing Integrated Solid-State Quantum Memories

TL;DR

This paper analyzes how electronic noise impacts the performance of integrated control systems for solid-state quantum memories, providing guidelines for design requirements based on noise characteristics and qubit coherence.

Contribution

It introduces a generalized modeling approach for noise effects on quantum memory control systems, validated with experiments on NV centers in diamond.

Findings

Phase noise and timing jitter significantly affect quantum memory fidelity.

Design specifications depend on qubit coherence time and environmental noise spectrum.

Procedure established for setting control electronics noise tolerances.

Abstract

As quantum networks expand and are deployed outside research laboratories, a need arises to design and integrate compact control electronics for each memory node. It is essential to understand the performance requirements for such systems, especially concerning tolerable levels of noise, since these specifications dramatically affect a system's design complexity and cost. Here, using an approach that can be easily generalized across quantum-hardware platforms, we present a case study based on nitrogen-vacancy (NV) centers in diamond. We model and experimentally verify the effects of phase noise and timing jitter in the control system in conjunction with the spin qubit's environmental noise. We further consider the impact of different phase noise characteristics on the fidelity of dynamical decoupling sequences. The results demonstrate a procedure to specify design requirements for integrated quantum control signal generators for solid-state spin qubits, depending on their coherence time, intrinsic noise spectrum, and required fidelity.