Back-Scattering Suppression for Broad-Spectral High-Absorption Silicon Extended Area Blackbody
HongShuai Zhou, JinHao Zhang, BenFeng Bai, XiRan Mei, KunPeng Chen,, XiaoPeng Hao, Jian Song, GuoRui Guo, JiaLin Chen, Tian Tian, WanJie Shen,, ZiHeng Zhong, JiaYao Liu, JiHong Zhao, HongBo Sun

TL;DR
This paper introduces a novel method to suppress backscattering in broad-spectral high-absorption silicon blackbodies, enhancing stability and emissivity for improved infrared calibration in extreme environments.
Contribution
It proposes a new backscattering suppression technique combined with femtosecond laser processing to create a high-emissivity, stable blackbody for precise infrared calibration.
Findings
Backscattering intensity and solid angle are significantly reduced.
The fabricated blackbody exhibits high emissivity and thermal stability.
Enhanced measurement accuracy in extreme environments.
Abstract
The stability and emissivity of the online calibration blackbody used in high-precision infrared remote sensing detectors in extreme environments are the primary limiting factors for their measurement accuracy. Due to the limitations of microstructure size effects, traditional calibration extended area blackbody cannot achieve an optimal balance between emissivity and stability, thus hindering further improvement in infrared remote sensing accuracy. This work proposes a new method that utilize suppressing near-field backscattering to control far-field reflectance. Specifically, through simultaneously reducing backscattering intensity and the backscattering solid angle, the reflectance is significantly reduced to an extremely low limit, which is validated through numerical simulations. Additionally, by combining the femtosecond laser self-convergent processing technique, the spontaneous…
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Taxonomy
TopicsThin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Semiconductor Quantum Structures and Devices
