A C-Band Cryogenic GaAs MMIC Low-Noise Amplifier for Quantum Applications
Zechen Guo, Daxiong Sun, Peisheng Huang, Xuandong Sun, Yuefeng Yuan,, Jiawei Zhang, Wenhui Huang, Yongqi Liang, Jiawei Qiu, Jiajian Zhang, Ji Chu,, Weijie Guo, Ji Jiang, Jingjing Niu, Wenhui Ren, Ziyu Tao, Xiayu Linpeng,, Youpeng Zhong, Dapeng Yu

TL;DR
This paper introduces a cryogenic C-Band GaAs MMIC low-noise amplifier designed for quantum computing readout, achieving high gain and low noise at 3.6 K, and demonstrating effective qubit measurement without quantum-limited amplifiers.
Contribution
It presents a novel GaAs-based cryo-LNA with integrated feedback and biasing, optimized for quantum applications, and benchmarks its performance with superconducting qubits.
Findings
Achieves 40 dB gain and 5 K noise temperature at 3.6 K
Demonstrates 98.3% single-shot readout fidelity
Operates with low power consumption of 15 mW
Abstract
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band,…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Radio Frequency Integrated Circuit Design · Superconducting and THz Device Technology
