Disorder-induced diffusion transport in flat-band systems with quantum metric
Chun Wang Chau, Tian Xiang, Shuai A. Chen, K. T. Law

TL;DR
This paper demonstrates that disorder can induce diffusion in flat-band systems with finite quantum metric, revealing a disorder-driven delocalization mechanism that challenges traditional theories and is relevant for materials like twisted bilayer graphene.
Contribution
It introduces a novel understanding of disorder effects in flat-band systems by linking quantum metric to diffusion, and develops an analytical framework for this phenomenon.
Findings
Disorder activates bulk transmission channels in flat-band systems.
Quantum metric determines the diffusion length in these systems.
Disorder leads to a maximum conductance before decay with increasing disorder.
Abstract
Our previous understanding of transport in disordered system depends on the assumption that there is a well-defined Fermi velocity. The Fermi velocity determines important length scales in the system such as the diffusion length and localization length. However, nearly flat band materials with vanishing Fermi velocity, it is uncertain how to understand the disorder effects and what quantities determine the characteristic length scales in the system. In the clean limit, it is expected that the bulk transport is absent. In this work, we demonstrate, with a diamond lattice, that disorder can induce diffusion transport in a flat-band system with finite quantum metric. As disorder increases, the bulk transmission channels are activated, and the conductance reaches a maximum before decays inversely with disorder strength. Importantly, via the calculation of the wave-packet dynamics…
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Taxonomy
TopicsQuantum and electron transport phenomena · Topological Materials and Phenomena · Quantum, superfluid, helium dynamics
