Fluctuations and optimal control in a Floquet Quantum Thermal Transistor

TL;DR

This paper investigates fluctuations and optimal control in a Floquet quantum thermal transistor using full counting statistics, demonstrating how modulation and control can optimize heat current amplification and precision trade-offs.

Contribution

It introduces the application of optimal control to enhance transistor amplification and analyze fluctuations in a three-qubit Floquet quantum thermal transistor.

Findings

Base current fluctuations are lower than emitter and collector.

Optimal control significantly enhances heat current amplification.

Trade-off observed between Fano factor reduction and base current magnitude.

Abstract

We use Full Counting Statistics to study fluctuations and optimal control in a three-terminal Floquet quantum thermal transistor. We model the setup using three qubits (termed as the emitter, collector and base) coupled to three thermal baths. As shown in Phys. Rev. E 106, 024110 (2022), one can achieve significant change in the emitter and collector currents through a small change in the base current, thereby achieving a thermal transistor operation. Using sinusoidal and pi-flip modulations of the base qubit frequency, we show that the variance of the base current is much less compared to those of the emitter and collector currents, while the opposite is true in case of the Fano factor. We then apply optimal control through the Chopped Random Basis optimization protocol, in order to significantly enhance the amplification obtained in the transistor. In contrast, a reduction in the Fano factor of the setup through optimal control is associated with a large base current, thereby suggesting a trade-off between precision and base current. We expect our results will be relevant for developing heat modulation devices in near-term quantum technologies.