Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

TL;DR

This study investigates how the microstructure and interface quality of sputtered tantalum films on sapphire influence microwave loss, revealing that epitaxial interfaces increase loss, but can be mitigated by interface engineering.

Contribution

It uncovers the relationship between epitaxial growth and microwave loss in tantalum films and demonstrates methods to reduce loss through interface modifications.

Findings

Epitaxial Ta/sapphire interfaces correlate with increased microwave loss.

Growing a thin Nb inter-layer reduces microwave loss in Ta films.

Surface treatment with argon plasma mitigates interface-related loss.

Abstract

Quantum coherence in superconducting circuits has increased steadily over the last decades as a result of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature is increased, our results show that the onset of epitaxial growth of alpha-phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss is only present in samples having an epitaxial Ta/sapphire interface and show that it is apparently mitigated by either growing a thin, epitaxial Nb inter-layer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in-situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.