Single-shot all-optical magnetization switching in in-plane magnetized magnetic tunnel junction

TL;DR

This paper demonstrates single-shot all-optical helicity-independent switching in an in-plane magnetized magnetic tunnel junction, enabling efficient magnetic state control with potential for ultrafast memory applications.

Contribution

It introduces a novel in-plane magnetized MTJ with toggle switching via a single optical pulse, relaxing constraints of perpendicular systems and achieving high TMR ratios.

Findings

Successful single-pulse toggle switching of CoFeB layer

Achieved TMR ratio exceeding 100%

Demonstrated in-plane magnetized MTJ with optical control

Abstract

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20 with a 10nm thick Co85Gd15 layer monitored by measuring the Tunnel magneto resistance of the device. The use of in plane magnetized electrodes relaxes the constrains linked to perpendicular magnetic anisotropy systems while achieving a tunneling magnetoresistance (TMR) ratio exceeding 100%. The influence of the upper electrical electrode, which is opaque to the laser beam in this study, is also discussed.