Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer

TL;DR

This paper introduces a new optical pyrometer-based method to directly and accurately measure active nitrogen flux during GaN growth in molecular beam epitaxy, improving process control.

Contribution

It presents a novel, non-invasive technique for real-time quantification of active nitrogen species based on transmitted optical signals during growth.

Findings

The method provides precise flux measurements correlated with plasma parameters.

It enables real-time monitoring of active nitrogen during GaN growth.

The approach improves understanding of plasma-surface interactions in MBE.

Abstract

A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on the analysis of the variations in the optical signal measured by a pyrometer during a two step, Gallium rich and Nitrogen controlled, growth modes. The method permits a precise, quantitative and direct measurement of the flux of active species as a function of the plasma generation parameters of the cell: nitrogen gas flux and RF-power.